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dc.contributor.authorSun, Haiding*
dc.contributor.authorWu, Feng*
dc.contributor.authorAltahtamouni, Talal Mohammed Ahmad*
dc.contributor.authorAlfaraj, Nasir*
dc.contributor.authorLi, Kun*
dc.contributor.authorDetchprohm, Theeradetch*
dc.contributor.authorDupuis, Russell D.*
dc.contributor.authorLi, Xiaohang*
dc.date.accessioned2017-08-14T06:41:39Z
dc.date.available2017-08-14T06:41:39Z
dc.date.issued2017-08-08en
dc.identifier.citationSun H, Wu F, Altahtamouni TMA, Alfaraj N, Li K, et al. (2017) Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate. Journal of Physics D: Applied Physics. Available: http://dx.doi.org/10.1088/1361-6463/aa8503.en
dc.identifier.issn0022-3727en
dc.identifier.issn1361-6463en
dc.identifier.doi10.1088/1361-6463/aa8503en
dc.identifier.urihttp://hdl.handle.net/10754/625347
dc.description.abstractThe growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.en
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by GCC Research Program GCC-2017-007. The work at Georgia Institute of Technology was supported in part by DARPA under grant W911NF-15-1-0026 and NSF under grant DMR-1410874. RDD acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6463/aa8503en
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6463/aa8503. As the Version of Record of this article is going to be/has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.subjectTMAl pretreatmenten
dc.subjectAlN filmen
dc.subjectpolarityen
dc.subjectcrystal qualityen
dc.subjectgrowth modeen
dc.titleStructural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrateen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division*
dc.contributor.departmentElectrical Engineering Program*
dc.contributor.departmentImaging and Characterization Core Lab*
dc.identifier.journalJournal of Physics D: Applied Physicsen
dc.eprint.versionPost-printen
dc.contributor.institutionwuhan national laboratory for optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, CHINA*
dc.contributor.institutionQatar University, Doha, Ad Dawhah, QATAR*
dc.contributor.institutionElectrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, Georgia, 30332, UNITED STATES*
dc.contributor.institutionGeorgia Institute of Technology, Atlanta, Georgia, UNITED STATES*
kaust.personSun, Haiding*
kaust.personAlfaraj, Nasir*
kaust.personLi, Kun*
kaust.personLi, Xiaohang*


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