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    Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

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    Sun+et+al_2017_J._Phys._D__App ...
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    Type
    Article
    Authors
    Sun, Haiding cc
    Wu, Feng
    Altahtamouni, Talal Mohammed Ahmad
    Alfaraj, Nasir cc
    Li, Kun
    Detchprohm, Theeradetch
    Dupuis, Russell cc
    Li, Xiaohang cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Imaging and Characterization Core Lab
    Date
    2017-08-08
    Permanent link to this record
    http://hdl.handle.net/10754/625347
    
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    Abstract
    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.
    Citation
    Sun H, Wu F, Altahtamouni TMA, Alfaraj N, Li K, et al. (2017) Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate. Journal of Physics D: Applied Physics. Available: http://dx.doi.org/10.1088/1361-6463/aa8503.
    Sponsors
    The KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by GCC Research Program GCC-2017-007. The work at Georgia Institute of Technology was supported in part by DARPA under grant W911NF-15-1-0026 and NSF under grant DMR-1410874. RDD acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
    Publisher
    IOP Publishing
    Journal
    Journal of Physics D: Applied Physics
    ISSN
    0022-3727
    1361-6463
    DOI
    10.1088/1361-6463/aa8503
    Additional Links
    http://iopscience.iop.org/article/10.1088/1361-6463/aa8503
    ae974a485f413a2113503eed53cd6c53
    10.1088/1361-6463/aa8503
    Scopus Count
    Collections
    Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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