Show simple item record

dc.contributor.authorZhang, Shuai
dc.contributor.authorWang, Chen-Guang
dc.contributor.authorLi, Ming-yang
dc.contributor.authorHuang, Di
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorJi, Wei
dc.contributor.authorWu, Shiwei
dc.date.accessioned2017-08-14T06:41:37Z
dc.date.available2017-08-14T06:41:37Z
dc.date.issued2017-07-25
dc.identifier.citationZhang S, Wang C-G, Li M-Y, Huang D, Li L-J, et al. (2017) Defect Structure of Localized Excitons in a WSe2 Monolayer. Physical Review Letters 119. Available: http://dx.doi.org/10.1103/PhysRevLett.119.046101.
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.doi10.1103/PhysRevLett.119.046101
dc.identifier.urihttp://hdl.handle.net/10754/625331
dc.description.abstractThe atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.
dc.description.sponsorshipThe work at Fudan was supported by the National Basic Research Program of China (No. 2014CB921601 and No. 2016YFA0301002), the National Natural Science Foundation of China (No. 91421108 and No. 11427902), and the Science and Technology Commission of Shanghai Municipality (16JC1400401). C.-G.W. and W.J. acknowledge support from the National Natural Science Foundation of China (NSFC) under Grants No. 61674171, No. 11274380, No. 91433103, and No. 11622437, the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China under Grant No. 16XNLQ01. C.-G.W. was supported by the Outstanding Innovative Talents Cultivation Funded Programs of Renmin University of China. The calculations were performed at the Physics Laboratory for High-Performance Computing of Renmin University of China and at the Shanghai Supercomputer Center. L. J. L. acknowledges the support from King Abdullah University of Science and Technology and Academia Sinica Taiwan.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttps://journals.aps.org/prl/abstract/10.1103/PhysRevLett.119.046101
dc.rightsArchived with thanks to Physical Review Letters
dc.titleDefect Structure of Localized Excitons in a WSe2 Monolayer
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionState Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, Fudan University, Shanghai, 200433, , China
dc.contributor.institutionDepartment of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, , China
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, 10617, , , Taiwan
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, , China
kaust.personLi, Ming-yang
kaust.personLi, Lain-Jong
refterms.dateFOA2018-06-13T14:38:23Z


Files in this item

Thumbnail
Name:
PhysRevLett.119.046101.pdf
Size:
1.147Mb
Format:
PDF
Description:
Main article
Thumbnail
Name:
SI_zhang_revised2_20170719.pdf
Size:
1.331Mb
Format:
PDF
Description:
Supplemental files

This item appears in the following Collection(s)

Show simple item record