Show simple item record

dc.contributor.authorMei, Yaochuan
dc.contributor.authorDiemer, Peter J.
dc.contributor.authorNiazi, Muhammad Rizwan
dc.contributor.authorHallani, Rawad K.
dc.contributor.authorJarolimek, Karol
dc.contributor.authorDay, Cynthia S.
dc.contributor.authorRisko, Chad
dc.contributor.authorAnthony, John E.
dc.contributor.authorAmassian, Aram
dc.contributor.authorJurchescu, Oana D.
dc.date.accessioned2017-08-14T06:41:37Z
dc.date.available2017-08-14T06:41:37Z
dc.date.issued2017-07-24
dc.identifier.citationMei Y, Diemer PJ, Niazi MR, Hallani RK, Jarolimek K, et al. (2017) Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps. Proceedings of the National Academy of Sciences: 201705164. Available: http://dx.doi.org/10.1073/pnas.1705164114.
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.pmid28739934
dc.identifier.doi10.1073/pnas.1705164114
dc.identifier.urihttp://hdl.handle.net/10754/625330
dc.description.abstractThe temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.
dc.description.sponsorshipJ.E.A. and C.R. thank the National Science Foundation (DMR-1627428) for support of calculations and organic semiconductor synthesis. The device work at Wake Forest was supported by the National Science Foundation under Grants ECCS-1254757 and DMR-1627925.
dc.publisherProceedings of the National Academy of Sciences
dc.relation.urlhttp://www.pnas.org/content/early/2017/07/20/1705164114.full
dc.rightsArchived with thanks to Proceedings of the National Academy of Sciences
dc.subjectOrganic Semiconductors
dc.subjectOrganic Field-effect Transistors
dc.subjectOrganic Devices
dc.subjectCharge-carrier Mobility
dc.subjectElectronic Traps
dc.titleCrossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalProceedings of the National Academy of Sciences
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics, Wake Forest University, Winston-Salem, NC 27109.
dc.contributor.institutionDepartment of Chemistry and Center for Applied Energy Research, University of Kentucky, Lexington, KY 40506.
dc.contributor.institutionDepartment of Chemistry, Wake Forest University, Winston-Salem, NC 27109.
kaust.personNiazi, Muhammad Rizwan
kaust.personNiazi, Muhammad Rizwan
kaust.personAmassian, Aram
kaust.personAmassian, Aram
refterms.dateFOA2018-01-05T00:00:00Z
dc.date.published-online2017-07-24
dc.date.published-print2017-08-15


Files in this item

Thumbnail
Name:
PNAS-2017-Mei-1705164114.pdf
Size:
1.470Mb
Format:
PDF
Description:
Main article
Thumbnail
Name:
pnas.1705164114.sapp.pdf
Size:
513.5Kb
Format:
PDF
Description:
Supplemental files

This item appears in the following Collection(s)

Show simple item record