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    Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

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    Type
    Article
    Authors
    Mei, Yaochuan
    Diemer, Peter J.
    Niazi, Muhammad Rizwan cc
    Hallani, Rawad K.
    Jarolimek, Karol
    Day, Cynthia S.
    Risko, Chad
    Anthony, John E.
    Amassian, Aram cc
    Jurchescu, Oana D. cc
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Organic Electronics and Photovoltaics Group
    Physical Science and Engineering (PSE) Division
    Date
    2017-07-24
    Online Publication Date
    2017-07-24
    Print Publication Date
    2017-08-15
    Permanent link to this record
    http://hdl.handle.net/10754/625330
    
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    Abstract
    The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.
    Citation
    Mei Y, Diemer PJ, Niazi MR, Hallani RK, Jarolimek K, et al. (2017) Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps. Proceedings of the National Academy of Sciences: 201705164. Available: http://dx.doi.org/10.1073/pnas.1705164114.
    Sponsors
    J.E.A. and C.R. thank the National Science Foundation (DMR-1627428) for support of calculations and organic semiconductor synthesis. The device work at Wake Forest was supported by the National Science Foundation under Grants ECCS-1254757 and DMR-1627925.
    Publisher
    Proceedings of the National Academy of Sciences
    Journal
    Proceedings of the National Academy of Sciences
    DOI
    10.1073/pnas.1705164114
    PubMed ID
    28739934
    Additional Links
    http://www.pnas.org/content/early/2017/07/20/1705164114.full
    ae974a485f413a2113503eed53cd6c53
    10.1073/pnas.1705164114
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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