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dc.contributor.authorTietze, Max Lutz
dc.contributor.authorLussem, Bjorn
dc.contributor.authorLiu, Shiyi
dc.date.accessioned2017-08-13T08:09:49Z
dc.date.available2017-08-13T08:09:49Z
dc.date.issued2017-06-29
dc.date.submitted2015-12-22
dc.identifier.urihttp://hdl.handle.net/10754/625327
dc.description.abstractVarious examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.
dc.relation.urlhttp://www.google.com/patents/WO2017109734A1
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017109734A1&KC=A1&FT=D
dc.titleOrganic tunnel field effect transistors
dc.typePatent
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.description.statusPublished Application
dc.contributor.assigneeKing Abdullah University Of Science And Technology
dc.description.countryWorld Intellectual Property Organization (WIPO)
dc.identifier.applicationnumberWO 2017109734 A1
refterms.dateFOA2018-06-13T12:48:18Z


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