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dc.contributor.authorKirmani, Ahmad R.
dc.contributor.authorGarcia de Arquer, F. Pelayo
dc.contributor.authorFan, James Z.
dc.contributor.authorKhan, Jafar Iqbal
dc.contributor.authorWalters, Grant
dc.contributor.authorHoogland, Sjoerd
dc.contributor.authorWehbe, Nimer
dc.contributor.authorSaid, Marcel M.
dc.contributor.authorBarlow, Stephen
dc.contributor.authorLaquai, Frédéric
dc.contributor.authorMarder, Seth R.
dc.contributor.authorSargent, Edward H.
dc.contributor.authorAmassian, Aram
dc.date.accessioned2017-08-07T10:52:00Z
dc.date.available2017-08-07T10:52:00Z
dc.date.issued2017-08-08
dc.identifier.citationKirmani AR, Garcia de Arquer FP, Fan JZ, Khan JI, Walters G, et al. (2017) Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics. ACS Energy Letters. Available: http://dx.doi.org/10.1021/acsenergylett.7b00540.
dc.identifier.issn2380-8195
dc.identifier.issn2380-8195
dc.identifier.doi10.1021/acsenergylett.7b00540
dc.identifier.urihttp://hdl.handle.net/10754/625298
dc.description.abstractEmployment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) have been important, recent developments in CQD optoelectronics. These have opened the route to single-step deposited high-performing CQD solar cells. These promising architectures employ a QD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the QD HTL in a solution of the metal-organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photo-generated electrons, leading to enhanced photocurrent and fill factor compared to undoped devices. We demonstrate 9.0% perovskite-shelled and 9.5% metal-halide-passivated CQD solar cells, both achieving ca. 10% relative enhancements over undoped baselines.
dc.description.sponsorshipThe authors thank Yadong Zhang (Georgia Institute of Technology) for the chemical synthesis of the metal-organic complex, Mo(tfd-COCF3)3, used in this study. F.P.G.A., J. Z. F., G. W., S. H., and E. H. S. thank the Award KUS-11-009-21 from King Abdullah University of Science and Technology (KAUST), the Ontario Research Fund - Research Excellence Program, and the Natural Sciences and Engineering Research Council of Canada (NSERC). M. M. S., S.B., and S. R. M. thank the Office of Naval Research for support through (N00014-14-1-0126). F.P.G.A. acknowledges financial support from the Connaught Fund.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00540
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00540.
dc.titleMolecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSurface Science
dc.identifier.journalACS Energy Letters
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.
dc.contributor.institutionSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, 901 Atlantic Drive, Atlanta, GA, 30332-0400, United States
kaust.personKirmani, Ahmad R.
kaust.personKhan, Jafar Iqbal
kaust.personWehbe, Nimer
kaust.personLaquai, Frederic
kaust.personAmassian, Aram
refterms.dateFOA2018-07-31T00:00:00Z
dc.date.published-online2017-08-08
dc.date.published-print2017-09-08


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