Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors
Cryer, Samuel J.
McNeill, Christopher R.
KAUST DepartmentKaust Solar Center (KSC)
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AbstractThe charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.
SponsorsThe authors thank KAUST and BASF for financial support and acknowledge EC FP7 Project SC2 (610115) EC H2020 Project SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and EP/M005143/1. M.N. and H.S. acknowledge financial support from the Engineering and Physical Sciences Research Council through a Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges Nava Technology Limited for a Ph.D. scholarship. The authors also thank Mr. James Fraser for the help of synthesizing several intermediates and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M. also acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/ WAXS beamline at the Australian Synchrotron, Victoria, Australia.
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