Influence of disorder on transfer characteristics of organic electrochemical transistors
Type
ArticleAuthors
Friedlein, Jacob T.Rivnay, Jonathan
Dunlap, David H.
McCulloch, Iain

Shaheen, Sean E.
McLeod, Robert R.
Malliaras, George G.

KAUST Department
Chemical Science ProgramKAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
Date
2017-07-13Online Publication Date
2017-07-13Print Publication Date
2017-07-10Permanent link to this record
http://hdl.handle.net/10754/625222
Metadata
Show full item recordAbstract
Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.Citation
Friedlein JT, Rivnay J, Dunlap DH, McCulloch I, Shaheen SE, et al. (2017) Influence of disorder on transfer characteristics of organic electrochemical transistors. Applied Physics Letters 111: 023301. Available: http://dx.doi.org/10.1063/1.4993776.Sponsors
J.T.F. acknowledges support from the Graduate Assistantships in Areas of National Need Award No. P200A120063 and the NSF GRFP Award No. DGE 1144083. S.E.S. acknowledges support from the National Science Foundation Grant No. DMR-1006930. R.R.M. acknowledges support from the National Science Foundation Grant CAREER (No. ECCS 0847390). R.R.M. and S.E.S. acknowledge support from the National Science Foundation Grant No. ECCS 1509909.Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/1.4993776ae974a485f413a2113503eed53cd6c53
10.1063/1.4993776