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dc.contributor.authorHo, Chih-Hsiang
dc.contributor.authorTsai, Dung-Sheng
dc.contributor.authorLu, Chao
dc.contributor.authorKim, Soo Youn
dc.contributor.authorMungan, Selin
dc.contributor.authorYang, Shih-Guo
dc.contributor.authorZhang, Yuanzhi
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2017-07-06T09:43:05Z
dc.date.available2017-07-06T09:43:05Z
dc.date.issued2017-06-27
dc.identifier.citationHo C-H, Tsai D-S, Lu C, Kim SY, Mungan S, et al. (2017) Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example. IEEE Electron Device Letters: 1–1. Available: http://dx.doi.org/10.1109/LED.2017.2720186.
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.doi10.1109/LED.2017.2720186
dc.identifier.urihttp://hdl.handle.net/10754/625161
dc.description.abstractThe effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7959154/
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
dc.subjectCircuit stability
dc.subjectHafnium
dc.subjectProtons
dc.subjectRadiation effects
dc.subjectRadio frequency
dc.subjectSputtering
dc.subjectThin film transistors
dc.titleDevice Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalIEEE Electron Device Letters
dc.eprint.versionPost-print
dc.contributor.institutionPurdue University, West Lafayette, IN, 47907-6130, USA.
dc.contributor.institutionInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.
dc.contributor.institutionDepartment of ECE, Southern Illinois University, Carbondale, IL, 62901, USA.
dc.contributor.institutionDepartment of Semiconductor Science, Dongguk University, Seoul 04620, South Korea.
kaust.personHe, Jr-Hau
refterms.dateFOA2018-06-14T03:38:47Z
dc.date.published-online2017-06-27
dc.date.published-print2017-08


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