• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguideTheses and Dissertations LibguideSubmit an Item

    Statistics

    Display statistics

    Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Thumbnail
    Name:
    07959154.pdf
    Size:
    651.7Kb
    Format:
    PDF
    Description:
    Accepted Manuscript
    Download
    Type
    Article
    Authors
    Ho, Chih-Hsiang
    Tsai, Dung-Sheng
    Lu, Chao
    Kim, Soo Youn
    Mungan, Selin
    Yang, Shih-Guo
    Zhang, Yuanzhi
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Solar Center (KSC)
    Date
    2017-06-27
    Online Publication Date
    2017-06-27
    Print Publication Date
    2017-08
    Permanent link to this record
    http://hdl.handle.net/10754/625161
    
    Metadata
    Show full item record
    Abstract
    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
    Citation
    Ho C-H, Tsai D-S, Lu C, Kim SY, Mungan S, et al. (2017) Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example. IEEE Electron Device Letters: 1–1. Available: http://dx.doi.org/10.1109/LED.2017.2720186.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Electron Device Letters
    DOI
    10.1109/LED.2017.2720186
    Additional Links
    http://ieeexplore.ieee.org/document/7959154/
    ae974a485f413a2113503eed53cd6c53
    10.1109/LED.2017.2720186
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

    entitlement

     
    DSpace software copyright © 2002-2022  DuraSpace
    Quick Guide | Contact Us | KAUST University Library
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.