Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example
Type
ArticleAuthors
Ho, Chih-HsiangTsai, Dung-Sheng
Lu, Chao
Kim, Soo Youn
Mungan, Selin
Yang, Shih-Guo
Zhang, Yuanzhi
He, Jr-Hau

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Date
2017-06-27Online Publication Date
2017-06-27Print Publication Date
2017-08Permanent link to this record
http://hdl.handle.net/10754/625161
Metadata
Show full item recordAbstract
The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.Citation
Ho C-H, Tsai D-S, Lu C, Kim SY, Mungan S, et al. (2017) Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example. IEEE Electron Device Letters: 1–1. Available: http://dx.doi.org/10.1109/LED.2017.2720186.Journal
IEEE Electron Device LettersAdditional Links
http://ieeexplore.ieee.org/document/7959154/ae974a485f413a2113503eed53cd6c53
10.1109/LED.2017.2720186