Planar heterojunction perovskite solar cell based on CdS electron transport layer
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Type
ArticleKAUST Department
Biological and Environmental Sciences and Engineering (BESE) DivisionKAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
Technology Transfer
Date
2017-07-02Online Publication Date
2017-07-02Print Publication Date
2017-08Permanent link to this record
http://hdl.handle.net/10754/625149
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We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.Citation
Abulikemu M, Barbe J, El Labban A, Eid J, Del Gobbo S (2017) Planar heterojunction perovskite solar cell based on CdS electron transport layer. Thin Solid Films. Available: http://dx.doi.org/10.1016/j.tsf.2017.07.003.Publisher
Elsevier BVJournal
Thin Solid FilmsAdditional Links
http://www.sciencedirect.com/science/article/pii/S0040609017304972ae974a485f413a2113503eed53cd6c53
10.1016/j.tsf.2017.07.003