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    Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

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    Type
    Article
    Authors
    Soltani, S.
    Bouzidi, M.
    Chine, Z.
    Toure, A.
    Halidou, I.
    El Jani, B.
    Shakfa, M. K.
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Photonics Laboratory
    Date
    2017-02-17
    Online Publication Date
    2017-02-17
    Print Publication Date
    2017-05
    Permanent link to this record
    http://hdl.handle.net/10754/625100
    
    Metadata
    Show full item record
    Abstract
    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
    Citation
    Soltani S, Bouzidi M, Chine Z, Touré A, Halidou I, et al. (2017) Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy. Thin Solid Films 630: 2–6. Available: http://dx.doi.org/10.1016/j.tsf.2017.02.039.
    Sponsors
    Financial support from the Tunisian General Directorate of Scientific and Technical Research (DGRST) is gratefully acknowledged. The authors would like to thank Prof. Dr. Martin Koch of the Physics Department of the Philipp University of Marburg for giving the opportunity to perform the time-resolved photoluminescence measurements in his laboratories.
    Publisher
    Elsevier BV
    Journal
    Thin Solid Films
    DOI
    10.1016/j.tsf.2017.02.039
    Additional Links
    http://www.sciencedirect.com/science/article/pii/S0040609017301281
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.tsf.2017.02.039
    Scopus Count
    Collections
    Articles; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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