A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

Type
Conference Paper
Authors
Prabaswara, Aditya cc
Ng, Tien Khee cc
Zhao, Chao cc
Janjua, Bilal cc
Alyamani, Ahmed
El-desouki, Munir
Ooi, Boon S. cc
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant Number
BAS/1/1614-01-01
Date
2017-05-08

Metadata
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Abstract
The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.
Citation
Prabaswara A, Ng TK, Zhao C, Janjua B, Alyamani A, et al. (2017) A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_si.2017.sth3n.5.
Sponsors
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).
Publisher
OSA
Journal
Conference on Lasers and Electro-Optics
DOI
10.1364/cleo_si.2017.sth3n.5
Handle URI
http://hdl.handle.net/10754/624994
Additional Links
https://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2017-STh3N.5
Collections
Conference Papers; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division