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    A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

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    Type
    Conference Paper
    Authors
    Prabaswara, Aditya cc
    Ng, Tien Khee cc
    Zhao, Chao cc
    Janjua, Bilal cc
    Alyamani, Ahmed
    El-desouki, Munir
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2017-05-08
    Online Publication Date
    2017-05-08
    Print Publication Date
    2017
    Permanent link to this record
    http://hdl.handle.net/10754/624994
    
    Metadata
    Show full item record
    Abstract
    The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.
    Citation
    Prabaswara A, Ng TK, Zhao C, Janjua B, Alyamani A, et al. (2017) A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_si.2017.sth3n.5.
    Sponsors
    We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).
    Publisher
    The Optical Society
    Journal
    Conference on Lasers and Electro-Optics
    DOI
    10.1364/cleo_si.2017.sth3n.5
    Additional Links
    https://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2017-STh3N.5
    ae974a485f413a2113503eed53cd6c53
    10.1364/cleo_si.2017.sth3n.5
    Scopus Count
    Collections
    Conference Papers; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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