A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate
Type
Conference PaperAuthors
Prabaswara, Aditya
Ng, Tien Khee

Zhao, Chao

Janjua, Bilal

Alyamani, Ahmed
El-desouki, Munir
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Grant Number
BAS/1/1614-01-01Date
2017-05-08Online Publication Date
2017-05-08Print Publication Date
2017Permanent link to this record
http://hdl.handle.net/10754/624994
Metadata
Show full item recordAbstract
The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.Citation
Prabaswara A, Ng TK, Zhao C, Janjua B, Alyamani A, et al. (2017) A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_si.2017.sth3n.5.Sponsors
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).Publisher
The Optical SocietyAdditional Links
https://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2017-STh3N.5ae974a485f413a2113503eed53cd6c53
10.1364/cleo_si.2017.sth3n.5