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dc.contributor.authorHota, Mrinal Kanti
dc.contributor.authorAlshammari, Fwzah H.
dc.contributor.authorSalama, Khaled N.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2017-06-14T06:39:40Z
dc.date.available2017-06-14T06:39:40Z
dc.date.issued2017-06-08
dc.identifier.citationHota MK, Alshammari FH, Salama KN, Alshareef HN (2017) Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b03078.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid28593752
dc.identifier.doi10.1021/acsami.7b03078
dc.identifier.urihttp://hdl.handle.net/10754/624989
dc.description.abstractWe report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b03078
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.7b03078.
dc.subjectCharge trapping flash memory
dc.subjectmultibit memory
dc.subjectnon-volatile memory
dc.subjectTFT
dc.subjectTa2O5
dc.titleTransparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
dc.contributor.institutionPhysical Sciences and Engineering Division
kaust.personSalama, Khaled N.
refterms.dateFOA2018-06-08T00:00:00Z


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