Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2017-06-22
Print Publication Date2017-07-05
Permanent link to this recordhttp://hdl.handle.net/10754/624989
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AbstractWe report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.
CitationHota MK, Alshammari FH, Salama KN, Alshareef HN (2017) Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b03078.
SponsorsResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
PublisherAmerican Chemical Society (ACS)