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    Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting

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    Type
    Article
    Authors
    Varadhan, Purushothaman
    Fu, Hui-Chun cc
    Priante, Davide cc
    Duran Retamal, Jose Ramon
    Zhao, Chao cc
    Ebaid, Mohamed cc
    Ng, Tien Khee cc
    Ajia, Idris A. cc
    Mitra, Somak cc
    Roqan, Iman S. cc
    Ooi, Boon S. cc
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Nano Energy Lab
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    Date
    2017-02-14
    Online Publication Date
    2017-02-14
    Print Publication Date
    2017-03-08
    Permanent link to this record
    http://hdl.handle.net/10754/623915
    
    Metadata
    Show full item record
    Abstract
    Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of −31 mA/cm at −0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.
    Citation
    Varadhan P, Fu H-C, Priante D, Retamal JRD, Zhao C, et al. (2017) Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting. Nano Letters 17: 1520–1528. Available: http://dx.doi.org/10.1021/acs.nanolett.6b04559.
    Sponsors
    KACST-TIC-R2-FP-008 J.H.H. greatly acknowledges the baseline funding from King Abdullah University of Science and Technology (KAUST) and the seed funds from the KAUST Solar Center. B.S.O. and T.K.N. acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant KACSTTIC R2-FP-008. J.H.H. and V.P. sincerely thank Dr. Ahad Ali Syed and Dr. Xian Bin Wang of the Nanofabrication Core Laboratories, KAUST for their support with atomic layer deposition.
    Publisher
    American Chemical Society (ACS)
    Journal
    Nano Letters
    DOI
    10.1021/acs.nanolett.6b04559
    Additional Links
    http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04559
    ae974a485f413a2113503eed53cd6c53
    10.1021/acs.nanolett.6b04559
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Photonics Laboratory; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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