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    Janus monolayers of transition metal dichalcogenides

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    Type
    Article
    Authors
    Lu, Ang-Yu
    Zhu, Hanyu cc
    Xiao, Jun
    Chuu, Chih-Piao
    Han, Yimo
    Chiu, Ming-Hui cc
    Cheng, Chia-Chin
    Yang, Chih-Wen cc
    Wei, Kung-Hwa
    Yang, Yiming
    Wang, Yuan cc
    Sokaras, Dimosthenis
    Nordlund, Dennis
    Yang, Peidong
    Muller, David A. cc
    Chou, Mei-Yin
    Zhang, Xiang cc
    Li, Lain-Jong cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2017-05-15
    Online Publication Date
    2017-05-15
    Print Publication Date
    2017-08
    Permanent link to this record
    http://hdl.handle.net/10754/623858
    
    Metadata
    Show full item record
    Abstract
    Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
    Citation
    Lu A-Y, Zhu H, Xiao J, Chuu C-P, Han Y, et al. (2017) Janus monolayers of transition metal dichalcogenides. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/nnano.2017.100.
    Sponsors
    L.-J.L. acknowledges support from the King Abdullah University of Science and Technology (Saudi Arabia), the Ministry of Science and Technology (MOST), the Taiwan Consortium of Emergent Crystalline Materials (TCECM), Academia Sinica (Taiwan) and Asian Office of Aerospace Research & Development (AOARD) under contract no. FA2386-15-1-0001 (USA). C.-P.C. and M.Y.C. acknowledge support from the Thematic Project of Academia Sinica. M.Y.C. acknowledges support from the National Science Foundation (NSF, grant no. 1542747). X.Z. acknowledges support from the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the US Department of Energy under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures programme, KCWF16) for PFM imaging and analysis; and Samsung Electronics for nonlinear optical characterization. Y.H. and D.A.M. were supported by the Cornell Center for Materials Research, NSF MRSEC (DMR-1120296) and NSF grant no. MRI-1429155. P.Y. acknowledges support from the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division under contract no. DE-AC02-05CH11231 (PChem KC3103).
    Publisher
    Springer Nature
    Journal
    Nature Nanotechnology
    DOI
    10.1038/nnano.2017.100
    PubMed ID
    28507333
    Additional Links
    http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2017.100.html
    ae974a485f413a2113503eed53cd6c53
    10.1038/nnano.2017.100
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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