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dc.contributor.authorIsakov, Ivan
dc.contributor.authorFaber, Hendrik
dc.contributor.authorGrell, Max
dc.contributor.authorWyatt-Moon, Gwenhivir
dc.contributor.authorPliatsikas, Nikos
dc.contributor.authorKehagias, Thomas
dc.contributor.authorDimitrakopulos, George P.
dc.contributor.authorPatsalas, Panos P.
dc.contributor.authorLi, Ruipeng
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2017-05-31T11:23:08Z
dc.date.available2017-05-31T11:23:08Z
dc.date.issued2017-04-06
dc.identifier.citationIsakov I, Faber H, Grell M, Wyatt-Moon G, Pliatsikas N, et al. (2017) Exploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors. Advanced Functional Materials 27: 1606407. Available: http://dx.doi.org/10.1002/adfm.201606407.
dc.identifier.issn1616-301X
dc.identifier.doi10.1002/adfm.201606407
dc.identifier.urihttp://hdl.handle.net/10754/623834
dc.description.abstractThe growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.
dc.description.sponsorshipI.I., M.G., and T.D.A. acknowledge the financial support from PragmatIC Printing Limited (Company Number 07423954) and from the Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/G037515/1). CHESS was supported by the NSF & NIH/NIGMS via NSF Award No. DMR-1332208.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201606407/full
dc.rightsThis is the peer reviewed version of the following article: I. Isakov, H. Faber, M. Grell, G. Wyatt-Moon, N. Pliatsikas, T. Kehagias, G. P. Dimitrakopulos, P. P. Patsalas, R. Li, T. D. Anthopoulos, Adv. Funct. Mater. 2017, 1606407., which has been published in final form at http://dx.doi.org/10.1002/adfm.201606407. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.subjectIndium oxide
dc.subjectLeidenfrost effect
dc.subjectSolution processing
dc.subjectSpray pyrolysis
dc.subjectThin-film transistors
dc.titleExploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.eprint.versionPost-print
dc.contributor.institutionBlackett Laboratory and Centre for Plastic Electronics Imperial College London London SW7 2AZ UK
dc.contributor.institutionDepartment of Physics Aristotle University of Thessaloniki 54124 Thessaloniki Greece
dc.contributor.institutionCornell High Energy Synchrotron Source Wilson Laboratory Cornell University Ithaca 14853NY USA
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-04-06T00:00:00Z
dc.date.published-online2017-04-06
dc.date.published-print2017-06


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