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dc.contributor.authorFei, Zhuping
dc.contributor.authorHan, Yang
dc.contributor.authorGann, Eliot
dc.contributor.authorHodsden, Thomas
dc.contributor.authorChesman, Anthony
dc.contributor.authorMcNeill, Christopher R.
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorHeeney, Martin
dc.date.accessioned2017-05-31T10:09:29Z
dc.date.available2017-05-31T10:09:29Z
dc.date.issued2017-06-15
dc.identifier.citationFei Z, Han Y, Gann E, Hodsden T, Chesman A, et al. (2017) Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications. Journal of the American Chemical Society. Available: http://dx.doi.org/10.1021/jacs.7b03099.
dc.identifier.issn0002-7863
dc.identifier.issn1520-5126
dc.identifier.doi10.1021/jacs.7b03099
dc.identifier.urihttp://hdl.handle.net/10754/623756
dc.description.abstractWe report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.
dc.description.sponsorshipWe thank the British Council (Grant Number 173601536) and EPSRC (EP/L016702/1) for support. C.R.M. acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/WAXS beamline at the Australian Synchrotron, Victoria, Australia.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/jacs.7b03099
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/jacs.7b03099.
dc.titleAlkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of the American Chemical Society
dc.eprint.versionPost-print
dc.contributor.institutionDept. Chemistry and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UK
dc.contributor.institutionDept. Physics and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UK
dc.contributor.institutionDept. of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
dc.contributor.institutionCSIRO Manufacturing, Bayview Ave Clayton, Victoria 3168, Australia
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-05-26T00:00:00Z
dc.date.published-online2017-06-15
dc.date.published-print2017-06-28


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