Electrical transport characterization of Al and Sn doped Mg 2 Si thin films
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ArticleAuthors
Zhang, BoZheng, Tao
Sun, Ce
Guo, Zaibing
Kim, Moon J.
Alshareef, Husam N.

Quevedo-Lopez, Manuel A.

Gnade, Bruce E.
KAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Nanofabrication Core Lab
Physical Science and Engineering (PSE) Division
Thin Films & Characterization
Date
2017-05-22Online Publication Date
2017-05-22Print Publication Date
2017-10Permanent link to this record
http://hdl.handle.net/10754/623711
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Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.Sponsors
The work was partially supported by the II-IV foundation and the University of Texas at Dallas. We thank Mr. Wallace Martin, Dr. Gordon Pollock and Mr. John Maynard from the cleanroom of the University of Texas at Dallas for their help with film preparation. We acknowledge Dr. Jian Wang from the University of Texas at Dallas for his fruitful discussions.Publisher
Elsevier BVJournal
Journal of Alloys and CompoundsAdditional Links
http://www.sciencedirect.com/science/article/pii/S092583881731842Xae974a485f413a2113503eed53cd6c53
10.1016/j.jallcom.2017.05.224