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    Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

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    Type
    Article
    Authors
    Zhang, Bo
    Zheng, Tao
    Sun, Ce
    Guo, Zaibing
    Kim, Moon J.
    Alshareef, Husam N. cc
    Quevedo-Lopez, Manuel A. cc
    Gnade, Bruce E.
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Physical Science and Engineering (PSE) Division
    Thin Films & Characterization
    Date
    2017-05-22
    Online Publication Date
    2017-05-22
    Print Publication Date
    2017-10
    Permanent link to this record
    http://hdl.handle.net/10754/623711
    
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    Abstract
    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
    Sponsors
    The work was partially supported by the II-IV foundation and the University of Texas at Dallas. We thank Mr. Wallace Martin, Dr. Gordon Pollock and Mr. John Maynard from the cleanroom of the University of Texas at Dallas for their help with film preparation. We acknowledge Dr. Jian Wang from the University of Texas at Dallas for his fruitful discussions.
    Publisher
    Elsevier BV
    Journal
    Journal of Alloys and Compounds
    DOI
    10.1016/j.jallcom.2017.05.224
    Additional Links
    http://www.sciencedirect.com/science/article/pii/S092583881731842X
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.jallcom.2017.05.224
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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