Critical parameters affecting the design of high frequency transmission lines in standard CMOS technology

Al Attar, Talal; Alshehri, Abdullah; Almansouri, Abdullah Saud Mohammed; Al-Turki, Abdullah Turki

Critical parameters affecting the design of high frequency transmission lines in standard CMOS technology

Files

07916053.pdf (373.59 KB)

Type

Conference Paper

Authors

Al Attar, Talal
Alshehri, Abdullah
Almansouri, Abdullah Saud Mohammed
Al-Turki, Abdullah Turki

KAUST Department

Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program

Online Publication Date

2017-05-13

Print Publication Date

2017-03

Date

2017-05-13

Abstract

Different structures of transmission lines were designed and fabricated in standard CMOS technology to estimate some critical parameters including the RMS value of the surface roughness and the loss tangent. The input impedances for frequencies up to 50 GHz were modeled and compared with measurements. The results demonstrated a strong correlation between the used model with the proposed coefficients and the measured results, attesting the robustness of the model and the reliability of the incorporated coefficients values.

Citation

Al-Attar T, Alshehri A, Almansouri A, Alturki A (2017) Critical parameters affecting the design of high frequency transmission lines in standard CMOS technology. 2017 International Applied Computational Electromagnetics Society Symposium - Italy (ACES). Available: http://dx.doi.org/10.23919/ROPACES.2017.7916053.