Critical parameters affecting the design of high frequency transmission lines in standard CMOS technology
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2017-05-13Online Publication Date
2017-05-13Print Publication Date
2017-03Permanent link to this record
http://hdl.handle.net/10754/623676
Metadata
Show full item recordAbstract
Different structures of transmission lines were designed and fabricated in standard CMOS technology to estimate some critical parameters including the RMS value of the surface roughness and the loss tangent. The input impedances for frequencies up to 50 GHz were modeled and compared with measurements. The results demonstrated a strong correlation between the used model with the proposed coefficients and the measured results, attesting the robustness of the model and the reliability of the incorporated coefficients values.Citation
Al-Attar T, Alshehri A, Almansouri A, Alturki A (2017) Critical parameters affecting the design of high frequency transmission lines in standard CMOS technology. 2017 International Applied Computational Electromagnetics Society Symposium - Italy (ACES). Available: http://dx.doi.org/10.23919/ROPACES.2017.7916053.Additional Links
http://ieeexplore.ieee.org/document/7916053/ae974a485f413a2113503eed53cd6c53
10.23919/ROPACES.2017.7916053