InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
Type
ArticleAuthors
Zhao, Chao
Ng, Tien Khee

Tseng, Chien-Chih

Li, Jun
Shi, Yumeng
Wei, Nini
Zhang, Daliang

Consiglio, Giuseppe Bernardo
Prabaswara, Aditya

Alhamoud, Abdullah
Albadri, Abdulrahman M.
Alyamani, Ahmed Y.
Zhang, Xixiang

Li, Lain-Jong

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Electron Microscopy
Imaging and Characterization Core Lab
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
KAUST Grant Number
BAS/1/1614-01-01Date
2017Permanent link to this record
http://hdl.handle.net/10754/623665
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Show full item recordAbstract
The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.Citation
Zhao C, Ng TK, Tseng C-C, Li J, Shi Y, et al. (2017) InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC Adv 7: 26665–26672. Available: http://dx.doi.org/10.1039/C7RA03590J.Sponsors
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).Publisher
Royal Society of Chemistry (RSC)Journal
RSC Adv.Additional Links
http://pubs.rsc.org/en/content/articlehtml/2017/RA/C7RA03590Jae974a485f413a2113503eed53cd6c53
10.1039/C7RA03590J
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