Transport and structural characterization of solution-processable doped ZnO nanowires
Thompson, Linda M.
Palke, Aaron C.
Stebbins, Jonathan F.
Online Publication Date2009-08-18
Print Publication Date2009-08-20
Permanent link to this recordhttp://hdl.handle.net/10754/623612
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AbstractThe use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 1020 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
CitationNoriega R, Goris L, Rivnay J, Scholl J, Thompson LM, et al. (2009) Transport and structural characterization of solution-processable doped ZnO nanowires. Nanoscale Photonic and Cell Technologies for Photovoltaics II. Available: http://dx.doi.org/10.1117/12.826204.
SponsorsThis research was supported by the King Abdullah University of Science and Technology (KAUST): Global Research Partnership (GRP) through the Center for Advanced Molecular Photovoltaics (CAMP), the Global Climate and Energy Project (GCEP) through Stanford University and the Department of Energy (Solar America Initiative).
PublisherSPIE-Intl Soc Optical Eng
Conference/Event nameNanoscale Photonic and Cell Technologies for Photovoltaics II