Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes
Reading, A. H.
Cohen, D. A.
Farrell, R. M.
Speck, J. S.
DenBaars, S. P.
Online Publication Date2016-08-11
Print Publication Date2016-08-08
Permanent link to this recordhttp://hdl.handle.net/10754/623610
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AbstractThe bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.
CitationMyzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, et al. (2016) Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes. Applied Physics Letters 109: 061109. Available: http://dx.doi.org/10.1063/1.4960791.
SponsorsThis work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
JournalApplied Physics Letters