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Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

dc.contributor.authorHwang, David
dc.contributor.authorYonkee, Benjamin P.
dc.contributor.authorAddin, Burhan Saif
dc.contributor.authorFarrell, Robert M.
dc.contributor.authorNakamura, Shuji
dc.contributor.authorSpeck, James S.
dc.contributor.authorDenBaars, Steven
dc.date.accessioned2017-05-15T10:35:09Z
dc.date.available2017-05-15T10:35:09Z
dc.date.issued2016-09-23
dc.identifier.citationHwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, et al. (2016) Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express 24: 22875. Available: http://dx.doi.org/10.1364/oe.24.022875.
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/oe.24.022875
dc.identifier.urihttp://hdl.handle.net/10754/623578
dc.description.abstractWe demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).
dc.description.sponsorshipKACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085.
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
dc.titlePhotoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates
dc.typeArticle
dc.identifier.journalOptics Express
dc.eprint.versionPost-print
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, USA
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
dc.date.published-online2016-09-23
dc.date.published-print2016-10-03


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