Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates
Yonkee, Benjamin P.
Addin, Burhan Saif
Farrell, Robert M.
Speck, James S.
Online Publication Date2016-09-23
Print Publication Date2016-10-03
Permanent link to this recordhttp://hdl.handle.net/10754/623578
MetadataShow full item record
AbstractWe demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).
CitationHwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, et al. (2016) Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express 24: 22875. Available: http://dx.doi.org/10.1364/oe.24.022875.
SponsorsKACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085.
PublisherThe Optical Society