Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
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AbstractWe calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.
CitationSmirnov AM, Young EC, Bougrov VE, Speck JS, Romanov AE (2016) Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures. APL Materials 4: 016105. Available: http://dx.doi.org/10.1063/1.4939907.
SponsorsA.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program.