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dc.contributor.authorOoi, Boon S.
dc.contributor.authorShen, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEldesouki, Munir M.
dc.date.accessioned2017-05-15T08:25:59Z
dc.date.available2017-05-15T08:25:59Z
dc.date.issued2017-04-13
dc.date.submitted2015-10-05
dc.identifier.urihttp://hdl.handle.net/10754/623499
dc.description.abstractExample apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.
dc.relation.urlhttp://www.google.com/patents/WO2017060836A1
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017060836A1&KC=A1&FT=D
dc.titleAn apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof
dc.typePatent
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.description.statusPublished Application
dc.contributor.assigneeKing Abdullah University Of Science And Technology
dc.contributor.assigneeKing Abdulaziz City For Science And Technology
dc.description.countryWorld Intellectual Property Organization (WIPO)
dc.identifier.applicationnumberWO 2017060836 A1
refterms.dateFOA2018-06-13T15:13:22Z


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