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dc.contributor.authorSun, Haiding
dc.contributor.authorWu, Feng
dc.contributor.authorPark, Young Jae
dc.contributor.authorAl tahtamouni, T. M.
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorDetchprohm, Theeradetch
dc.contributor.authorDupuis, Russell D.
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2017-05-14T06:58:09Z
dc.date.available2017-05-14T06:58:09Z
dc.date.issued2017-05-12
dc.identifier.citationInfluence of TMAl preflow on AlN epitaxy on sapphire 2017, 110 (19):192106 Applied Physics Letters
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4983388
dc.identifier.urihttp://hdl.handle.net/10754/623481
dc.description.abstractThe trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by GCC Research Program GCC-2017–007. The work at Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
dc.language.isoen
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4983388
dc.rightsArchived with thanks to Applied Physics Letters
dc.subjectSapphire
dc.subjectAlN films
dc.subjectThin film growth
dc.subjectIII-V semiconductors
dc.subjectEpitaxy
dc.titleInfluence of TMAl preflow on AlN epitaxy on sapphire
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionGeorgia Institute of Technology
dc.contributor.institutionQatar University
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
refterms.dateFOA2018-05-12T00:00:00Z
dc.date.published-online2017-05-12
dc.date.published-print2017-05-08


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