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    Influence of TMAl preflow on AlN epitaxy on sapphire

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    Sun_APL_110_192106_2017.pdf
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    Type
    Article
    Authors
    Sun, Haiding cc
    Wu, Feng
    Park, Young Jae
    Al tahtamouni, T. M. cc
    Li, Kuang-Hui
    Alfaraj, Nasir cc
    Detchprohm, Theeradetch
    Dupuis, Russell D. cc
    Li, Xiaohang cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Date
    2017-05-12
    Online Publication Date
    2017-05-12
    Print Publication Date
    2017-05-08
    Permanent link to this record
    http://hdl.handle.net/10754/623481
    
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    Abstract
    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.
    Citation
    Influence of TMAl preflow on AlN epitaxy on sapphire 2017, 110 (19):192106 Applied Physics Letters
    Sponsors
    The KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by GCC Research Program GCC-2017–007. The work at Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/1.4983388
    Additional Links
    http://aip.scitation.org/doi/10.1063/1.4983388
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.4983388
    Scopus Count
    Collections
    Articles; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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