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dc.contributor.authorPu, Jiang
dc.contributor.authorFujimoto, Taiyo
dc.contributor.authorOhasi, Yuki
dc.contributor.authorKimura, Shota
dc.contributor.authorChen, Chang-Hsiao
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorSakanoue, Tomo
dc.contributor.authorTakenobu, Taishi
dc.date.accessioned2017-05-09T12:54:45Z
dc.date.available2017-05-09T12:54:45Z
dc.date.issued2017-04-18
dc.identifier.citationPu J, Fujimoto T, Ohasi Y, Kimura S, Chen C-H, et al. (2017) A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers. Advanced Materials: 1606918. Available: http://dx.doi.org/10.1002/adma.201606918.
dc.identifier.issn0935-9648
dc.identifier.doi10.1002/adma.201606918
dc.identifier.urihttp://hdl.handle.net/10754/623439
dc.description.abstractThe light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p-n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p-i-n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.
dc.description.sponsorshipT.T. was partially supported by the Funding Program for the Next Generation of World-Leading Researchers and Grants-in-Aid from MEXT (JP26107533, JP26102012, JP16K13618, JP15K21721, and JP25000003). T.S. was supported by the Japan Society for the Promotion of Science (JSPS) Grant-in-Aid for Young Scientists (A) (JP26706012). J.P. was supported by the Leading Graduate Program in Science and Engineering, Waseda University from MEXT, and by the Research Fellowship for Young Scientists from JSPS. L.J.L. acknowledges support from KAUST (Saudi Arabia), the Ministry of Science and Technology, Taiwan Consortium of Emergent Crystalline, Academia Sinica Taiwan, and AOARD-134137 (USA). C.H.C. acknowledges the supports from the Ministry of Science and Technology, MOST104-2218-E-035-010 and MOST104-2628-E-035-002-MY3.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201606918/full
dc.subjectZinc oxide
dc.subjectTransition Metal Dichalcogenides
dc.subjectLight-emitting Devices
dc.subjectP-i-n Junction
dc.subjectElectric Double Layers
dc.titleA Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionDepartment of Advanced Science and Engineering; Waseda University; Tokyo 169-8555 Japan
dc.contributor.institutionDepartment of Applied Physics; Nagoya University; Nagoya 464-8603 Japan
dc.contributor.institutionDepartment of Applied Physics; Waseda University; Tokyo 169-8555 Japan
dc.contributor.institutionDepartment of Automatic Control Engineering; Feng Chia University; Taichung 40724 Taiwan
kaust.personLi, Lain-Jong
dc.date.published-online2017-04-18
dc.date.published-print2017-06


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