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dc.contributor.authorWang, Yao
dc.contributor.authorZhang, Qingyun
dc.contributor.authorShen, Qian
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorHuang, Wei
dc.date.accessioned2017-05-09T12:54:45Z
dc.date.available2017-05-09T12:54:45Z
dc.date.issued2017-04-12
dc.identifier.citationWang Y, Zhang Q, Shen Q, Cheng Y, Schwingenschlögl U, et al. (2017) Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping. J Mater Chem C. Available: http://dx.doi.org/10.1039/c7tc00299h.
dc.identifier.issn2050-7526
dc.identifier.issn2050-7534
dc.identifier.doi10.1039/c7tc00299h
dc.identifier.urihttp://hdl.handle.net/10754/623436
dc.description.abstractWe employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge. Both the sample thickness and applied strain are found to have huge effects on the electronic and magnetic properties. Multi-layer PbO is an indirect band gap semiconductor, while a direct band gap is realized in the single-layer limit. In hole-doped single-layer PbO, biaxial tensile strain can enhance the stability of the ferromagnetic state.
dc.description.sponsorshipThis work was financially supported by the National Natural Science Foundation of China (No. 11504169, 61575094 and 21673118), the National Basic Research Program of China (2015CB932200), the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (16KJB150018) and the Jiangsu Province Postgraduate Innovation Project. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC00299H#!divAbstract
dc.titleLead Monoxide: Two-Dimensional Ferromagnetic Semiconductor Induced by Hole-Doping
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJ. Mater. Chem. C
dc.contributor.institutionKey Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
kaust.personZhang, Qingyun
kaust.personSchwingenschlögl, Udo


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