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dc.contributor.authorSaidaoui, Hamed Ben Mohamed
dc.contributor.authorWaintal, Xavier
dc.contributor.authorManchon, Aurelien
dc.date.accessioned2017-05-09T08:34:34Z
dc.date.available2017-05-09T08:34:34Z
dc.date.issued2017-04-17
dc.identifier.citationSaidaoui HBM, Waintal X, Manchon A (2017) Robust spin transfer torque in antiferromagnetic tunnel junctions. Physical Review B 95. Available: http://dx.doi.org/10.1103/PhysRevB.95.134424.
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.doi10.1103/PhysRevB.95.134424
dc.identifier.urihttp://hdl.handle.net/10754/623414
dc.description.abstractWe theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.
dc.description.sponsorshipA.M. acknowledges the financial support of the King Abdullah University of Science and Technology (KAUST) through the Office of Sponsored Research (OSR; Grant No. OSR-2015-CRG4-2626).
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.134424
dc.rightsArchived with thanks to Physical Review B
dc.titleRobust spin transfer torque in antiferromagnetic tunnel junctions
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSpintronics Theory Group
dc.identifier.journalPhysical Review B
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionUniversity Grenoble Alpes, INAC-PHELIQS, Grenoble, F-38000, , France
dc.contributor.institutionCEA, INAC-PHELIQS, Grenoble, F-38000, , France
dc.identifier.arxividarXiv:1607.01523
kaust.personSaidaoui, Hamed Ben Mohamed
kaust.personManchon, Aurelien
kaust.grant.numberOSR-2015-CRG4-2626
refterms.dateFOA2018-06-13T18:59:51Z


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