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dc.contributor.authorCao, Sheng
dc.contributor.authorZheng, Jinju
dc.contributor.authorZhao, Jialong
dc.contributor.authorYang, Zuobao
dc.contributor.authorLi, Chengming
dc.contributor.authorGuan, Xinwei
dc.contributor.authorYang, Weiyou
dc.contributor.authorShang, Minghui
dc.contributor.authorWu, Tao
dc.date.accessioned2017-05-08T10:48:40Z
dc.date.available2017-05-08T10:48:40Z
dc.date.issued2017-05
dc.identifier.citationCao S, Zheng J, Zhao J, Yang Z, Li C, et al. (2017) Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b03262.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.7b03262
dc.identifier.urihttp://hdl.handle.net/10754/623398
dc.description.abstractColloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.
dc.description.sponsorshipThis work was financially supported by the National Natural Science Foundation of China (NSFC, Grant No. 61106066), Zhejiang Provincial Science Foundation (Grant No. LY14F040001), Foundation of Educational Commission in Zhejiang Province of China (Grant No. Y201533502), and Natural Science Foundation of Ningbo Municipal Government (Grant Nos. 2016A610104 and 2016A610108).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b03262
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.7b03262.
dc.subjectNanoparticles
dc.subjectCharge transfer
dc.subjectLed
dc.subjectElectron Transport Layer
dc.subjectGa-doped Zno
dc.titleEnhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer
dc.typeArticle
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
dc.contributor.institutionInstitute for Advanced Materials and Technology, University of Science and Technology Beijing , Beijing 100083, China.
dc.contributor.institutionInstitute of Materials, Ningbo University of Technology , Ningbo 315016, China.
dc.contributor.institutionKey Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University , Siping 136000, China.
kaust.personGuan, Xinwei
kaust.personWu, Tao
refterms.dateFOA2018-04-19T00:00:00Z
dc.date.published-online2017-05
dc.date.published-print2017-05-10


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