Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
| dc.contributor.author | Shen, Chao | |
| dc.contributor.author | Ng, Tien Khee | |
| dc.contributor.author | Lee, Changmin | |
| dc.contributor.author | Leonard, John T. | |
| dc.contributor.author | Nakamura, Shuji | |
| dc.contributor.author | Speck, James S. | |
| dc.contributor.author | Denbaars, Steven P. | |
| dc.contributor.author | Alyamani, Ahmed Y. | |
| dc.contributor.author | El-Desouki, Munir M. | |
| dc.contributor.author | Ooi, Boon S. | |
| dc.date.accessioned | 2017-05-04T06:39:21Z | |
| dc.date.available | 2017-05-04T06:39:21Z | |
| dc.date.issued | 2017-02-16 | |
| dc.identifier.citation | Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144. | |
| dc.identifier.doi | 10.1117/12.2251144 | |
| dc.identifier.uri | http://hdl.handle.net/10754/623329 | |
| dc.description.abstract | III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the | |
| dc.description.sponsorship | The authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01). | |
| dc.publisher | SPIE-Intl Soc Optical Eng | |
| dc.relation.url | http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125 | |
| dc.rights | Copyright 2017 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. | |
| dc.subject | Amplified spontaneous emission | |
| dc.subject | Gallium nitride | |
| dc.subject | InGaN | |
| dc.subject | Laser diode | |
| dc.subject | Light-emitting diode | |
| dc.subject | Solid-state lighting | |
| dc.subject | Superluminescent diodes | |
| dc.subject | Visible light communication | |
| dc.title | Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications | |
| dc.type | Conference Paper | |
| dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
| dc.contributor.department | Electrical Engineering Program | |
| dc.identifier.journal | Gallium Nitride Materials and Devices XII | |
| dc.conference.date | 2017-01-30 to 2017-02-02 | |
| dc.conference.name | Gallium Nitride Materials and Devices XII | |
| dc.conference.location | San Francisco, CA, USA | |
| dc.eprint.version | Publisher's Version/PDF | |
| dc.contributor.institution | Univ. of California, Santa Barbara (United States) | |
| dc.contributor.institution | King Abdulaziz City for Science and Technology (Saudi Arabia) | |
| kaust.person | Shen, Chao | |
| kaust.person | Ng, Tien Khee | |
| kaust.person | Ooi, Boon S. | |
| kaust.grant.number | BAS/1/1614-01-01 | |
| refterms.dateFOA | 2018-06-13T14:53:20Z |
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Fabrication and Characterization of GaN-Based Superluminescent Diode for Solid-State Lighting and Visible Light Communication(2020-04) [Dissertation]
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