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dc.contributor.authorShen, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorLee, Changmin
dc.contributor.authorLeonard, John T.
dc.contributor.authorNakamura, Shuji
dc.contributor.authorSpeck, James S.
dc.contributor.authorDenbaars, Steven P.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEl-Desouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-05-04T06:39:21Z
dc.date.available2017-05-04T06:39:21Z
dc.date.issued2017-02-16
dc.identifier.citationShen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.
dc.identifier.doi10.1117/12.2251144
dc.identifier.urihttp://hdl.handle.net/10754/623329
dc.description.abstractIII-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
dc.description.sponsorshipThe authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125
dc.rightsCopyright 2017 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
dc.subjectAmplified spontaneous emission
dc.subjectGallium nitride
dc.subjectInGaN
dc.subjectLaser diode
dc.subjectLight-emitting diode
dc.subjectSolid-state lighting
dc.subjectSuperluminescent diodes
dc.subjectVisible light communication
dc.titleSemipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalGallium Nitride Materials and Devices XII
dc.conference.date2017-01-30 to 2017-02-02
dc.conference.nameGallium Nitride Materials and Devices XII
dc.conference.locationSan Francisco, CA, USA
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionUniv. of California, Santa Barbara (United States)
dc.contributor.institutionKing Abdulaziz City for Science and Technology (Saudi Arabia)
kaust.personShen, Chao
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2018-06-13T14:53:20Z


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