Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Type
Conference PaperAuthors
Shen, Chao
Ng, Tien Khee
Lee, Changmin
Leonard, John T.
Nakamura, Shuji
Speck, James S.
Denbaars, Steven P.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Grant Number
BAS/1/1614-01-01Date
2017-02-16Permanent link to this record
http://hdl.handle.net/10754/623329Metadata
Show full item recordAbstract
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by theCitation
Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.Sponsors
The authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).Publisher
SPIE-Intl Soc Optical EngConference/Event name
Gallium Nitride Materials and Devices XIIScopus Count
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