Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Ng, Tien Khee
Leonard, John T.
Speck, James S.
Denbaars, Steven P.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberBAS/1/1614-01-01
MetadataShow full item record
AbstractIII-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
CitationShen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.
SponsorsThe authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).
Conference/Event nameGallium Nitride Materials and Devices XII
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