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    Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

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    101041U.pdf
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    Type
    Conference Paper
    Authors
    Shen, Chao cc
    Ng, Tien Khee cc
    Lee, Changmin
    Leonard, John T.
    Nakamura, Shuji
    Speck, James S.
    Denbaars, Steven P.
    Alyamani, Ahmed Y.
    El-Desouki, Munir M.
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2017-02-16
    Permanent link to this record
    http://hdl.handle.net/10754/623329
    
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    Abstract
    III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the
    Citation
    Shen C, Ng TK, Lee C, Leonard JT, Nakamura S, et al. (2017) Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications . Gallium Nitride Materials and Devices XII. Available: http://dx.doi.org/10.1117/12.2251144.
    Sponsors
    The authors acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008, and KACST-KAUST-UCSB Solid-State Lighting Program. This work is partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01).
    Publisher
    SPIE-Intl Soc Optical Eng
    Journal
    Gallium Nitride Materials and Devices XII
    Conference/Event name
    Gallium Nitride Materials and Devices XII
    DOI
    10.1117/12.2251144
    Additional Links
    http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2605125
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2251144
    Scopus Count
    Collections
    Conference Papers; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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      Fabrication and Characterization of GaN-Based Superluminescent Diode for Solid-State Lighting and Visible Light Communication

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      To date, group-III-nitride has undergone continuous improvements to provide a broader range of industrial applications, such as solid-state lighting (SSL), visible light communications (VLC), and light projection. Recently, VLC has attained substantial attention in the field of wireless communication because it offers ~ 370 THz of bandwidth of unregulated visible spectrum, which makes it a critical factor in the evolution of the 5G networks and beyond. GaN-based light-emitting diode (LED) and laser diode (LD) have become increasingly appealing in energy-sufficient SSL replacing conventional light sources. However, III- nitride LEDs suffer from efficiency-droop in their external quantum efficiency associated with high current densities, and their modulation bandwidth is limited to 10 ~ 100 MHz. Although LDs have shown gigabit-modulation bandwidth, unfavorable artifacts, such as speckles are observed, which may raise a concern about eye safety. This dissertation is devoted to the fabrication and electrical and optical characterization of a new class of III-nitride light-emitter known as superluminescent diode (SLD). SLD works in an amplified spontaneous emission (ASE) regime, and it combines several advantages from both LD and LED, such as droop-free, speckle-free, low-spatial coherence, broader emission, high-optical power, and directional beam. Here, SLDs were fabricated by a focused ion beam by tilting the front facet of the waveguide to suppress the lasing mode. They showed a high-power of 474 mW on c-plane GaN-substrate with a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. To generate SLD- based white light, a YAG-phosphor-plate was integrated, and a CRI of 85.1 and CCT of 3392 K were measured. For the VLC link, SLD showed record high-data rates of 1.45 Gbps and 3.4 Gbps by OOK and DMT modulation schemes, respectively. Additionally, a widely single- and dual-wavelength tunability were designed using SLD-based external cavity (SLD-EC) configuration for a tunable blue laser source. These results underscore the practicality of c-plane SLDs in realizing high-power, high data rate, speckle-free, and droop-free SSL-VLC apparatus. Additionally, the SLD-EC configuration allows a wide range of applications, including biomedical applications, optical communication, and high-resolution spectroscopy.
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