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    Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

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    Type
    Article
    Authors
    Tomasi, Andrea
    Paviet-Salomon, Bertrand
    Jeangros, Quentin
    Haschke, Jan cc
    Christmann, Gabriel
    Barraud, Loris
    Descoeudres, Antoine
    Seif, Johannes Peter
    Nicolay, Sylvain
    Despeisse, Matthieu
    De Wolf, Stefaan cc
    Ballif, Christophe
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2017-04-24
    Online Publication Date
    2017-04-24
    Print Publication Date
    2017-05
    Permanent link to this record
    http://hdl.handle.net/10754/623314
    
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    Abstract
    For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.
    Citation
    Tomasi A, Paviet-Salomon B, Jeangros Q, Haschke J, Christmann G, et al. (2017) Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth. Nature Energy 2: 17062. Available: http://dx.doi.org/10.1038/nenergy.2017.62.
    Sponsors
    This work was supported by the Swiss Commission for Technology and Innovation (CTI) by the Swiss Federal Office for Energy (SFOE), and by the Fonds National Suisse Reequip Program. The authors thank Meyer Burger Research for scientific partnership and financial support; D. Lachenal and B. Strahm for support and collaboration in back-contacted silicon heterojunction solar-cell development; J. Hermans and Meyer Burger B.V. for the support in inkjet printing; M. Pickrell and SunChemicals for supplying the hot melt; the Academic Writing Services at KAUST for text editing; M. J. Lehmann, N. Badel and H. Watanabe at EPFL and CSEM for their support in back-end processing; and A. Hessler at EPFL and CIME for the TEM observations.
    Publisher
    Springer Nature
    Journal
    Nature Energy
    DOI
    10.1038/nenergy.2017.62
    Additional Links
    https://www.nature.com/articles/nenergy201762
    ae974a485f413a2113503eed53cd6c53
    10.1038/nenergy.2017.62
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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