Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Ajia, Idris A.
Aljefri, Renad A.
Ng, Tien Khee
Ooi, Boon S.
Roqan, Iman S.
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Materials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Permanent link to this recordhttp://hdl.handle.net/10754/623269
MetadataShow full item record
AbstractThe photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.
CitationPhotoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires 2017, 110 (16):161110 Applied Physics Letters
SponsorsKing Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1664-01-01, BAS/1/1647-01-05 and BAS/1/1614–01-01. King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008.
JournalApplied Physics Letters