Ng, Tien Khee
Hedhili, Mohamed N.
Anjum, Dalaver H.
Alias, Mohd Sharizal
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Sciences and Engineering (PSE) Division
KAUST Catalysis Center (KCC)
Imaging and Characterization Core Lab
KAUST Grant NumberBAS/1/1614-01-01
MetadataShow full item record
AbstractWe study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
CitationTangi M, Mishra P, Tseng C-C, Ng TK, Hedhili MN, et al. (2017) Band Alignment at GaN/Single-Layer WSe2 Interface. ACS Applied Materials & Interfaces 9: 9110–9117. Available: http://dx.doi.org/10.1021/acsami.6b15370.
SponsorsWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).
PublisherAmerican Chemical Society (ACS)