Show simple item record

dc.contributor.authorShen, Chao
dc.contributor.authorLee, Changmin
dc.contributor.authorNg, Tien Khee
dc.contributor.authorNakamura, Shuji
dc.contributor.authorSpeck, James S.
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorEl-Desouki, Munir M.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2017-04-13T11:50:59Z
dc.date.available2017-04-13T11:50:59Z
dc.date.issued2017-02-07
dc.identifier.citationShen C, Lee C, Ng TK, Nakamura S, Speck JS, et al. (2016) High gain semiconductor optical amplifier — Laser diode at visible wavelength. 2016 IEEE International Electron Devices Meeting (IEDM). Available: http://dx.doi.org/10.1109/IEDM.2016.7838473.
dc.identifier.doi10.1109/IEDM.2016.7838473
dc.identifier.urihttp://hdl.handle.net/10754/623176
dc.description.abstractWe reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.
dc.description.sponsorshipThe authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/document/7838473/
dc.titleHigh gain semiconductor optical amplifier — Laser diode at visible wavelength
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journal2016 IEEE International Electron Devices Meeting (IEDM)
dc.conference.date2016-12-03 to 2016-12-07
dc.conference.name62nd IEEE International Electron Devices Meeting, IEDM 2016
dc.conference.locationSan Francisco, CA, USA
dc.contributor.institutionMaterials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, United States of America
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
kaust.personShen, Chao
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
dc.date.published-online2017-02-07
dc.date.published-print2016-12


This item appears in the following Collection(s)

Show simple item record