High gain semiconductor optical amplifier — Laser diode at visible wavelength
Ng, Tien Khee
Speck, James S.
DenBaars, Steven P.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST DepartmentPhotonics Laboratory
KAUST Grant NumberBAS/1/1614-01-01
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AbstractWe reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.
CitationShen C, Lee C, Ng TK, Nakamura S, Speck JS, et al. (2016) High gain semiconductor optical amplifier — Laser diode at visible wavelength. 2016 IEEE International Electron Devices Meeting (IEDM). Available: http://dx.doi.org/10.1109/IEDM.2016.7838473.
SponsorsThe authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).
Conference/Event name62nd IEEE International Electron Devices Meeting, IEDM 2016