High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics
Type
Conference PaperAuthors
Zhao, Chao
Ng, Tien Khee

Wei, Nini
Janjua, Bilal

Elafandy, Rami T.

Prabaswara, Aditya

Shen, Chao

Consiglio, Giuseppe B.
Albadri, Abdulrahman
Alyamani, Ahmed Y.
El-desouki, Munir M.
Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Electron Microscopy
Imaging and Characterization Core Lab
Photonics Laboratory
KAUST Grant Number
BAS/1/1614-01-01Date
2016-11-21Online Publication Date
2016-11-21Print Publication Date
2016Permanent link to this record
http://hdl.handle.net/10754/623167
Metadata
Show full item recordAbstract
The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.Citation
Zhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.Sponsors
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).Publisher
The Optical SocietyConference/Event name
Asia Communications and Photonics Conference, ACPC 2016Additional Links
https://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6ae974a485f413a2113503eed53cd6c53
10.1364/acpc.2016.as1f.6