High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics
Ng, Tien Khee
Elafandy, Rami T.
Consiglio, Giuseppe B.
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S.
KAUST Grant NumberBAS/1/1614-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/623167
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AbstractThe first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.
CitationZhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.
SponsorsThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
PublisherThe Optical Society
Conference/Event nameAsia Communications and Photonics Conference, ACPC 2016