High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Type
Conference Paper
Authors
Zhao, Chao cc
Ng, Tien Khee cc
Wei, Nini
Janjua, Bilal cc
Elafandy, Rami T. cc
Prabaswara, Aditya cc
Shen, Chao cc
Consiglio, Giuseppe B.
Albadri, Abdulrahman
Alyamani, Ahmed Y.
El-Desouki, Munir M.
Ooi, Boon S. cc
KAUST Department
Photonics Laboratory
Imaging and Characterization Core Lab
KAUST Grant Number
BAS/1/1614-01-01
Date
2016-11-21
Permanent link to this record
http://hdl.handle.net/10754/623167

Metadata
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Abstract
The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.
Citation
Zhao C, Ng T, Wei N, Janjua B, ElAfandy RT, et al. (2016) High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. Asia Communications and Photonics Conference 2016. Available: http://dx.doi.org/10.1364/acpc.2016.as1f.6.
Sponsors
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
Publisher
The Optical Society
Journal
Asia Communications and Photonics Conference 2016
Conference/Event name
Asia Communications and Photonics Conference, ACPC 2016
DOI
10.1364/acpc.2016.as1f.6
Additional Links
https://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6
Collections
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory