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dc.contributor.authorHo, C. H.
dc.contributor.authorDuran Retamal, Jose Ramon
dc.contributor.authorYang, P. K.
dc.contributor.authorLee, C. P.
dc.contributor.authorTsai, M. L.
dc.contributor.authorKang, C. F.
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2017-04-10T07:49:52Z
dc.date.available2017-04-10T07:49:52Z
dc.date.issued2017-03-14
dc.identifier.citationHo CH, Retamal JRD, Yang PK, Lee CP, Tsai ML, et al. (2017) Transparent Memory For Harsh Electronics. Scientific Reports 7: 44429. Available: http://dx.doi.org/10.1038/srep44429.
dc.identifier.issn2045-2322
dc.identifier.doi10.1038/srep44429
dc.identifier.urihttp://hdl.handle.net/10754/623116
dc.description.abstractAs a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.
dc.description.sponsorshipJr-Hau He is grateful for the baseline funding of KAUST.
dc.publisherSpringer Nature
dc.relation.urlhttp://www.nature.com/articles/srep44429
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleTransparent Memory For Harsh Electronics
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalScientific Reports
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
kaust.personDuran Retamal, Jose Ramon
kaust.personYang, P. K.
kaust.personLee, C. P.
kaust.personTsai, M. L.
kaust.personKang, C. F.
kaust.personHe, Jr-Hau
refterms.dateFOA2018-06-13T22:05:29Z
dc.date.published-online2017-03-14
dc.date.published-print2017-12


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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.