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dc.contributor.authorPetti, Luisa
dc.contributor.authorPattanasattayavong, Pichaya
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorMünzenrieder, Niko
dc.contributor.authorCantarella, Giuseppe
dc.contributor.authorYaacobi-Gross, Nir
dc.contributor.authorYan, Feng
dc.contributor.authorTröster, Gerhard
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2017-04-10T07:49:51Z
dc.date.available2017-04-10T07:49:51Z
dc.date.issued2017-03-17
dc.identifier.citationPetti L, Pattanasattayavong P, Lin Y-H, Münzenrieder N, Cantarella G, et al. (2017) Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits. Applied Physics Letters 110: 113504. Available: http://dx.doi.org/10.1063/1.4978531.
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/1.4978531
dc.identifier.urihttp://hdl.handle.net/10754/623105
dc.description.abstractWe report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.
dc.description.sponsorshipThe authors would like to acknowledge N. Wijeyasinghe from Imperial College London for her support during the device and circuit fabrication and characterization.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4978531
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.4978531.
dc.titleSolution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
dc.contributor.institutionElectronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland
dc.contributor.institutionDepartment of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong 21210, Thailand
dc.contributor.institutionSensor Technology Research Center, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9RH, United Kingdom
dc.contributor.institutionDepartment of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hong Kong, China
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-03-17T00:00:00Z
dc.date.published-online2017-03-17
dc.date.published-print2017-03-13


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