Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits
Type
ArticleAuthors
Petti, LuisaPattanasattayavong, Pichaya

Lin, Yen-Hung
Münzenrieder, Niko

Cantarella, Giuseppe
Yaacobi-Gross, Nir
Yan, Feng
Tröster, Gerhard
Anthopoulos, Thomas D.

KAUST Department
KAUST Solar Center (KSC)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2017-03-17Online Publication Date
2017-03-17Print Publication Date
2017-03-13Permanent link to this record
http://hdl.handle.net/10754/623105
Metadata
Show full item recordAbstract
We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.Citation
Petti L, Pattanasattayavong P, Lin Y-H, Münzenrieder N, Cantarella G, et al. (2017) Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits. Applied Physics Letters 110: 113504. Available: http://dx.doi.org/10.1063/1.4978531.Sponsors
The authors would like to acknowledge N. Wijeyasinghe from Imperial College London for her support during the device and circuit fabrication and characterization.Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/1.4978531ae974a485f413a2113503eed53cd6c53
10.1063/1.4978531