KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/623033
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AbstractThis paper presents a novel way of controlling the bouncing phenomenon commonly present in the Radio Frequency Microelectromechanical Systems (RF MEMS) switches using a double-electrode configuration. The paper discusses modeling bouncing using both lumped parameter and beam models. The simulations of bouncing and its control are discussed. Comparison between the new proposed method and other available control techniques is also made. The Galerkin method is applied on the beam model accounting for the nonlinear electrostatic force, squeeze film damping, and surface contact effect. The results indicate that it is possible to reduce bouncing and hence beam degradation, by the use of double electrodes.
CitationAbdul Rahim F, Younis MI (2016) Control of Bouncing in MEMS Switches Using Double Electrodes. Mathematical Problems in Engineering 2016: 1–10. Available: http://dx.doi.org/10.1155/2016/3479752.
SponsorsThis work has been supported by KAUST.
PublisherHindawi Publishing Corporation
Except where otherwise noted, this item's license is described as This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.