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dc.contributor.authorKhim, Dongyoon
dc.contributor.authorLin, Yen-Hung
dc.contributor.authorNam, Sungho
dc.contributor.authorFaber, Hendrik
dc.contributor.authorTetzner, Kornelius
dc.contributor.authorLi, Ruipeng
dc.contributor.authorZhang, Qiang
dc.contributor.authorLi, Jun
dc.contributor.authorZhang, Xixiang
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2017-03-19T13:24:06Z
dc.date.available2017-03-19T13:24:06Z
dc.date.issued2017-03-15
dc.identifier.citationKhim D, Lin Y-H, Nam S, Faber H, Tetzner K, et al. (2017) Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution. Advanced Materials: 1605837. Available: http://dx.doi.org/10.1002/adma.201605837.
dc.identifier.issn0935-9648
dc.identifier.doi10.1002/adma.201605837
dc.identifier.urihttp://hdl.handle.net/10754/623020
dc.description.abstractThis paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
dc.description.sponsorshipD.K., Y.-H.L., H.F., and T.D.A. are grateful to the European Research Council (ERC) AMPRO Project No. 280221 for financial support. Q.Z., J.L., and X.Z., are grateful to KAUST for the financial support. CHESS was supported by the NSF & NIH/NIGMS via NSF Award DMR-1332208.
dc.publisherWiley
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adma.201605837/full
dc.rightsThis is the peer reviewed version of the following article: Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution, which has been published in final form at http://doi.org/10.1002/adma.201605837. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
dc.subjectMetal oxides
dc.subjectSemiconductors
dc.subjectSolution Processing
dc.subjectElectron Mobility
dc.subjectThin Film Transistors
dc.subjectModulation Doping
dc.subjectHeterojunction Transistors
dc.titleModulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentThin Films & Characterization
dc.identifier.journalAdvanced Materials
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics; Imperial College London; South Kensington London SW7 2AZ UK
dc.contributor.institutionCornell High Energy Synchrotron Source; Wilson Laboratory Cornell University; Ithaca NY 14853 USA
kaust.personZhang, Qiang
kaust.personLi, Jun
kaust.personZhang, Xixiang
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-03-15T00:00:00Z
dc.date.published-online2017-03-15
dc.date.published-print2017-05


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