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    Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

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    Name:
    Khim et al., Adv. Mater. 2017, 1605837.pdf
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    1.697Mb
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    Description:
    Accepted Manuscript
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    Type
    Article
    Authors
    Khim, Dongyoon
    Lin, Yen-Hung
    Nam, Sungho
    Faber, Hendrik
    Tetzner, Kornelius cc
    Li, Ruipeng
    Zhang, Qiang cc
    Li, Jun
    Zhang, Xixiang cc
    Anthopoulos, Thomas D. cc
    KAUST Department
    Imaging and Characterization Core Lab
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Nanofabrication Core Lab
    Physical Science and Engineering (PSE) Division
    Thin Films & Characterization
    Date
    2017-03-15
    Online Publication Date
    2017-03-15
    Print Publication Date
    2017-05
    Permanent link to this record
    http://hdl.handle.net/10754/623020
    
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    Abstract
    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
    Citation
    Khim D, Lin Y-H, Nam S, Faber H, Tetzner K, et al. (2017) Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution. Advanced Materials: 1605837. Available: http://dx.doi.org/10.1002/adma.201605837.
    Sponsors
    D.K., Y.-H.L., H.F., and T.D.A. are grateful to the European Research Council (ERC) AMPRO Project No. 280221 for financial support. Q.Z., J.L., and X.Z., are grateful to KAUST for the financial support. CHESS was supported by the NSF & NIH/NIGMS via NSF Award DMR-1332208.
    Publisher
    Wiley
    Journal
    Advanced Materials
    DOI
    10.1002/adma.201605837
    Additional Links
    http://onlinelibrary.wiley.com/doi/10.1002/adma.201605837/full
    ae974a485f413a2113503eed53cd6c53
    10.1002/adma.201605837
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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